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Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in appli

FIELD EFFECT SILICON CARBIDE TRANSISTOR - Patent application

FIELD EFFECT SILICON CARBIDE TRANSISTOR Inventors: Toshiyuki Mine (Tokyo, JP) Yasuhiro Shimamoto (Tokyo, JP) Hirotaka Hamamura (

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Request PDF on ResearchGate | Silicon Carbide Nanowire Field effect Transistors with High ON/OFF Current Ratio | We report the important performance

A Black Phosphorus Carbide Infrared Phototransistor. - PubMed

Here, a novel 2DM, black phosphorous carbide (b-PC) with a wide absorption spectrum up to 8000 nm is synthesized and a b-PC phototransistor with a

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Gregor Pobegens 58 research works with 540 citations and 1,702 reads, including: An adapted method for analyzing 4H silicon carbide metal-oxide-

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201325-Silicon Carbide Transistor advantages include low switching losses, higher efficiency, high temperature operation and high short circuit wit

Field Effect Silicon Carbide Transistor

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Radiation Response of Silicon Carbide Diodes and Transistors

Radiation Response of Silicon Carbide Diodes and Transistors By Takeshi 1. Introduction Silicon Carbide (SiC) is regarded as a promising candidate

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201091-The Microsemi Corp. RF Integrated Solutions (RFIS) segment in Sunnyvale, Calif., is introducing the model 0405SC-2200M silicon carbide (SiC)

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Silicon Carbide (SiC) - Infineon Technologies

Silicon Carbide (SiC) devices belong to the so-called wide band gap Ultra-fast switching 1200-V power transistors such as CoolSiC™ MOSFETs

Silicon Carbide Junction Transistors | Power Electronics

Silicon Carbide Junction Transistors May 06, 2013A family of 1700V and 1200 V SiC Junction Transistors from GeneSiC Semiconductor reportedly increase

SILICON CARBIDE JUNCTION FIELD EFFECT TRANSISTORS |

process for implantation metal mask, Paper presented at International Conference on Silicon Carbide and Related Materials 2005, Pittsburgh, USA,

Silicon carbide gate transistor - Micron Technology, Inc.

A field-effect transistor (FET) device and method of fabrication uses an electrically interconnected polycrystalline or microcrystalline silicon carbide (SiC)

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2009413-Transistors made of silicon carbide, as developed in a research collaboration of Siemens and Russian scientists, manage to concentrate five

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