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Resistance of Silicon Carbide Schottky Diode Detectors in

Abstract: Silicon carbide (SiC) is a wide band-gap semiconductor material with many excellent properties, showing great potential in fusion neutron

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INCLUDING SILICON CARBIDE AND AN INORGANIC BOND MATERIAL

United States Patent Application 20190100683 a bond material extending throughout the silicon carbide (SiC) contained within the

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properties of the armchair silicon carbide nanotube-

PubMed journal article Scalable graphene synthesised by plasma-assisted selective reaction on silicon carbide for device application were found in PRIME PubMe

US Patent Application for SILICON CARBIDE SEMICONDUCTOR

A silicon carbide semiconductor device includes a first semiconductor layer of a first conductivity type provided on a front surface of a semiconductor

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of the Fundamental Current Mechanisms in Silicon Carbide

silicon carbide Schottky barrier diodes over a large temperature and does the material fully polarise in response to a carrier’s

on the combined effects of titania and silicon carbide on

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Silicon carbide: A playground for ID-modulation electronics

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US Patent for Method for manufacturing silicon carbide single

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